Enhanced performance of room temperature ammonia sensors using morphology-controlled organic field-effect transistors |
| |
| Affiliation: | 1. Department of Optics and Photonics, National Central University, Zhongli 320, Taiwan;2. National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan;3. Department of Chemistry, National Tsing-Hua University, Hsinchu 300, Taiwan;1. Department of Chemistry, Gebze Technical University, 41400, Gebze, Kocaeli, Turkey;2. Institut de Chimie Moléculaire de l''Université de Bourgogne (ICMUB), Université Bourgogne Franche-Comté, UMR CNRS 6302, 9 Avenue A. Savary, F-21078, Dijon, France;3. Department of Medical Engineering, Acibadem Mehmet Ali Aydınlar University, Faculty of Engineering, Istanbul, Turkey;1. Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China;2. Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China;1. National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China;2. Anhui Key Laboratory of Advanced Functional Materials and Devices, School of Chemistry and Chemical Engineering, Hefei University of Technology, Anhui Province, Hefei 230009, China |
| |
| Abstract: | Developing electronic sensors for ammonia (NH3) is very useful for environmental monitoring and diagnostic purposes. In this work, a highly sensitive, organic field-effect transistor (OFET) based, room temperature sensor for NH3 has been fabricated using dinaphtho [2,3-b:2′,3′-f]thieno [3,2-b]thiophene (DNTT), which showed a fast response to low concentration of the analyte down to 100 ppb. A thin film of solution-processed polymethyl methacrylate (PMMA) has been used as the gate dielectric material and its hydrophobic surface promoted structured growth of organic semiconductor, DNTT, by inducing mass transfer. By controlling the thickness and thereby exploiting the growth dynamics of the semiconductor film, the sensor performance was improved. The sensitivity of the device towards 1 ppm of NH3 was almost doubled with a thinner and porous film of DNTT as compared to that with a thick film. Morphological studies of the sensing layers, using atomic force microscopy (AFM), have established this structure-property relation. The variations in different transistor parameters have been studied with respect to different analyte concentrations. The p-channel devices in the enhancement mode showed depletion upon exposure to NH3. The devices exhibited a fast response and good recovery to the initial state within 2 min. |
| |
| Keywords: | DNTT Nano-crystallites Porous film Organic field-effect transistor Ammonia sensor |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
