Transparent photodetectors with ultra-low dark current and high photoresponse for near-infrared detection |
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| Affiliation: | 1. Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan, Republic of China;2. Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan, Republic of China;3. Department of Physics, Vivekananda College, University of Calcutta, Thakurpukur, Kolkata 700063, India;4. Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 24301, Taiwan, Republic of China |
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| Abstract: | A remarkable progress in research works regarding flexibility and transparency of organic optoelectronic devices has been observed in the past decade compared to their inorganic counterparts. However, few studies have been devoted to the advancement of a transparent organic photodetector. In this study, we have used a wavelength-selective bulk-heterojunction of ClAlPc:C60 as active layer and Cu:Ag/WO3 metal alloy as electrode to realize a see-through organic photodetector (OPD) with an average visible transmission of 76.92%. The optimized transparent OPDs show an average dark current density of 0.36 nA cm−2 and a rise/fall time of <5 μs under a bias voltage of −2 V, which could be potentially applied in a home security system based on invisible near-infrared detection. |
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| Keywords: | Transparent organic photodetectors OPD Photoresponse Dark current density Near-infrared detection |
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