CN decoration of dibenzofuran modified biphenyl for high triplet energy host for blue phosphorescent organic light-emitting diodes |
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Affiliation: | 1. School of Chemical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 440-746, Republic of Korea;2. School of Advanced Materials and Chemical Engineering, Daegu Catholic University, 13-13, Hayang-ro, Hayang-eup, Gyeonsan-si, Gyeongbuk 38430, Republic of Korea |
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Abstract: | A strongly electron deficient and high triplet energy host for blue emitters was developed by decorating a dibenzofuran modified biphenyl backbone structure with multiple CN units. Two hosts, 6,6′-bis(6-cyanodibenzob,d]furan-4-yl)-1,1′-biphenyl]-3,3′-dicarbonitrile(CNDBF1) and 2,2′-bis(6-cyanodibenzob,d]furan-4-yl)-1,1′-biphenyl]-4,4′-dicarbonitrile(CNDBF2), were derived from the CN decoration strategy for application in blue organic light-emitting diodes requiring high triplet energy host. They showed high triplet energy above 2.79 eV and acted as the electron transport type host based on the strong electron deficiency. The mixture of the CNDBF1 and CNDBF2 hosts with a hole transport type 3,3′-di(9H-carbazol-9-yl)-1,1′-biphenyl host performed as the exciplex host of a blue phosphor and accomplished high external quantum efficiency of 22.7% in the blue phosphorescent organic light-emitting diodes. |
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Keywords: | Blue device Phosphorescence n-type host CN decoration |
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