High-performance 2,9-DPh-DNTT organic thin-film transistor by weak epitaxy growth method |
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| Affiliation: | 1. Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395, Japan;2. Center for Future Chemistry, Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395, Japan;1. Department of Materials, University of Oxford, Oxford OX1 3PH, UK;2. School of Chemistry, University of Manchester, Manchester M13 9PL, UK;3. School of Electronic Engineering, Bangor University, Bangor LL57 1UT, UK;1. Fakultät für Physik & CeNS, Ludwig-Maximilians-Universität München, Munich, D-80539, Germany;2. Nanosystems Initiative Munich (NIM), D-80799, Munich, Germany |
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| Abstract: | 2,9-DPh-DNTT, an isomeric of diphenyl-dinaphtho[2,3-b:2′,3′-f]-thieno[3,2-b] thiophene (DPh-DNTTs), is an emerging candidate of high mobility organic semiconductor material. In this work, a high performance 2,9-DPh-DNTT organic thin-film transistor (OTFT) is fabricated by the method of weak epitaxy growth. The quality of 2,9-DPh-DNTT thin film was significantly improved when its epitaxial layer grows on an inducing layer of para-sexiphenyl (p-6P). Continuous large-area, highly ordered and terraced 2,9-DPh-DNTT polycrystalline thin films are obtained. The hole mobility of as-fabricated 2,9-DPh-DNTT thin-film transistor reaches up to 6.4 cm2 V−1s−1. This simple process of preparing high mobility 2,9-DPh-DNTT thin-film transistor supplies a facile route of large-area OTFT fabrication. |
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| Keywords: | DNTT Organic thin-film transistor Weak epitaxy growth High mobility |
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