量子阱半导体激光器P—I特性曲线扭折的研究

小功率窄条形半导体激光器注入电流超过阈值后，其P－I特性曲线可能偏离理想的线性区，出现扭折现象，从而会严重影响激光器与光纤的耦合。本文分析讨论了出现扭折现象与器件结构的关系。通过优化激光器纵向结构设计，采用较窄的有源区，在MOCVD结构生长中用碳作P型掺杂，制造出来的未镀膜激光器在100mA注入电流下输出光功率50mW未出现P－I特性的扭折。

Study on Kinks in P-I Characteristic Curves of Semiconductor Quantum-well Stripe Geometry Lasers

It was discovered that P I characteristic curve of the narrow stripe semiconductor lasers appear the kinks.This effect will negatively affect the coupling between laser and fiber.We found that the kinks are relatived to the laser structures.The kinks have been avoided from optimizing the longitudinal structure,adopting narrow active region and using C as p dopant for the lasers operating at 50 mW with 100 mA injection.