| MEXTRAM 504模型及其对SiGe HBT的模拟 |
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| 引用本文： | 肖琼, 郑学仁,. MEXTRAM 504模型及其对SiGe HBT的模拟[J]. 电子器件, 2005, 28(3): 524-528 |
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| 作者姓名： | 肖琼 郑学仁 |
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| 作者单位： | 华南理工大学微电子研究所,广州,510640;华南理工大学微电子研究所,广州,510640 |
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| 摘 要： | 针对传统SGP模型的不足，介绍了一种新型的BJT模型MEXTRAM 504及其等效电路，与传统模型相比。MEX-TRAM显示了极高的准确度。由于特别增加了描述基区缓变和基区载流子复合的两个参数，使MAXTRAM适合模拟加入SiGe工艺技术的HBT，模拟曲线与Medici的模拟相当吻合，为射频器件设计和电路模拟奠定了良好的基础。
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| 关 键 词： | MEXTRAM 504 SGP SiGe 集电极外延层模型 自热模型 |
| 文章编号： | 1005-9490（2005）03-0524-05 |
| 收稿时间： | 2005-03-21 |
| 修稿时间： | 2005-03-21 |
BJT MEXTRAM Level 504 and its Simulation for SiGe HBT |
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| XIAO Qiong,ZHENG Xue-ren. BJT MEXTRAM Level 504 and its Simulation for SiGe HBT[J]. Journal of Electron Devices, 2005, 28(3): 524-528 |
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| Authors: | XIAO Qiong ZHENG Xue-ren |
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| Affiliation: | Microelectronic Research Laboratory; South China University of Technology; Guangzhou 510640; China |
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| Abstract: | Due to the deficiency of conventional models, a new BJT model MEXTRAM, level 504 and its equivalent circuit are introduced. Compared with former models,it exhibits perfect accuracy. MEXTRAM specially uses two parameters for SiGe HBT model, and experiments show that the simulation curves have a very good agreement with Medici simulation data. It is the meaning for the advanced device design and circuit simulation. |
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| Keywords: | MEXTRAM 504 SGP SiGe |
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