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面向5GHz无线应用的单片InGaP/GaAs HBT压控振荡器
引用本文:陈立强,张健,李志强,陈普锋,张海英. 面向5GHz无线应用的单片InGaP/GaAs HBT压控振荡器[J]. 半导体学报, 2007, 28(6): 823-828
作者姓名:陈立强  张健  李志强  陈普锋  张海英
作者单位:中国科学院微电子研究所,北京 100029;中国科学院微电子研究所,北京 100029;中国科学院微电子研究所,北京 100029;中国科学院微电子研究所,北京 100029;中国科学院微电子研究所,北京 100029
基金项目:国家自然科学基金 , 国家重点基础研究发展计划(973计划)
摘    要:介绍了一种由商用InGaP/GaAs异质结双极晶体管工艺制成、基于负阻原理的单片压控振荡器,此电路定位于5GHz频段下的无线应用.在实际使用中,除了旁路和去耦电容外,无需外接其他外部元件.测试得到的输出频率范围超过300MHz,为4.17~4.56GHz,与仿真结果非常吻合;相位噪声为-112dBc/Hz@1MHz;在3.3V电源电压下,其核心部分的直流功耗为15.5mW,输出功率为0~2dBm.为了与其他振荡器比较,还通过计算得到了相位噪声优值,约为-173.2dBc/Hz.同时,还讨论了负阻振荡器的原理和设计方法.

关 键 词:压控振荡器  单片微波集成电路  无线通信  InGaP/GaAs异质结双极晶体管  VCO  MMIC  wireless communication  InGaP/GaAs HBT  无线应用  InGaP  GaAs  压控振荡器  Monolithic  Applications  design  method of  oscillator  figure of merit  compare  output power  ranges  supply  core  phase noise  offset  simulation  frequency  external
文章编号:0253-4177(2007)06-0823-06
修稿时间:2007-01-22

A Monolithic InGaP/GaAs HBT VCO for 5GHz Wireless Applications
Chen Liqiang,Zhang Jian,Li Zhiqiang,Chen Pufeng and Zhang Haiying. A Monolithic InGaP/GaAs HBT VCO for 5GHz Wireless Applications[J]. Chinese Journal of Semiconductors, 2007, 28(6): 823-828
Authors:Chen Liqiang  Zhang Jian  Li Zhiqiang  Chen Pufeng  Zhang Haiying
Affiliation:Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
Abstract:A monolithic voltage controlled oscillator (VCO) based on negative resistance principle is presented utilizing commercially available InGaP/GaAs hetero-junction bipolar transistor (HBT) technology.This VCO is designed for 5GHz-band wireless applications.Except for bypass and decoupled capacitors,no external component is needed for real application.Its measured output frequency range is from 4.17 to 4.56GHz,which is very close to the simulation one.And the phase noise at an offset frequency of 1MHz is -112dBc/Hz.The VCO core dissipates 15.5mW from a 3.3V supply,and the output power ranges from 0 to 2dBm.To compare with other oscillators,the figure of merit is calculated,which is about -173.2dBc/Hz.Meanwhile,the principle and design method of negative resistance oscillator are also discussed.
Keywords:VCO  MMIC  wireless communication  InGaP/GaAs HBT
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