Mg掺杂InxGa1-xN薄膜的磁控溅射法制备和表征

本文采用磁控溅射法用In2O3靶、Ga2O3靶、Mg靶在Si片上制备出InxGa1-xN薄膜和Mg掺杂的InxGa1-xN薄膜。薄膜中的In组分随着Mg的掺杂而减少，因为Mg的掺杂抑制了In-N键的形成，并增加了Ga进入薄膜的机会。通过EDS对Mg掺杂的InxGa1-xN薄膜的分析表明，有1.4%的Mg组分被成功地注入进InxGa1-xN薄膜。电学性能分析表明 In0.84Ga0.16N 和Mg掺杂的 In0.1Ga0.9N薄膜导电类型由n型转变为p型，而且Mg掺杂的 In0.1Ga0.9N薄膜的空穴浓度和电子迁移率分别为 2.65×1018 cm?3 和3.9 cm2/Vs。

Preparation and characterization of Mg doped InxGa1-xN thin films by magnetron sputtering

Being considered In2O3, Ga2O3, Mg as In, Ga and Mg sources, the InxGa1-xN and Mg doped InxGa1-xN thin films were deposited on Si substrate by magnetron sputtering. The In component in the film decreases with the doping of Mg, because Mg doped suppresses the formation of In-N bond and increases the chance of Ga into the film. The EDS analysis of Mg doped InxGa1-xN film as-prepared show that 1.4 % of Mg content was successfully doped into the InxGa1-xN film. The electrical performances of In0.84Ga0.16N and Mg doped In0.1Ga0.9N thin films reveal that the type conduction of InxGa1-xN thin films is transformed from n-type to p-type conduction, and the hole concentration and mobility of Mg doped In0.1Ga0.9N thin film are found to be 2.65×1018 cm?3 and 3.9 cm2/Vs, respectively.