The determination of interface layers by spectroscopic ellipsometry |
| |
| Authors: | J.B. Theeten D.E. Aspnes |
| |
| Affiliation: | Bell Laboratories, Murray Hill, N.J. 07974, U.S.A. |
| |
| Abstract: | Spectroscopic ellipsometry has recently proved to be particularly useful for determining the presence and properties of interface layers between a substrate and a dielectric overlayer. The principles and optimum conditions for measuring these layers are given. Examples discussed include Si3N4 on silicon, SiO2 on silicon and GaAs oxide on GaAs. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
