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Backscattering analysis of the successive layer structures of titanium silicides
Authors:Jer-Shen Maa  Chien-Jung Lin  Jui-Hsiang Liu  Yuen-Chung Liu
Affiliation:Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu Taiwan;Department of Physics, National Tsing Hua University, Hsinchu Taiwan
Abstract:Solid state reactions of titanium thin films with silicon and with SiO2 were studied using a backscattering technique. For the Ti-Si system layers of TiSi2, TiSi and Ti5Si3 were detected in the temperature range 500–600°C. For the Ti-SiO2 system layers of TiOx and Ti5Si3 were formed in the temperature range 700–900°C. At temperatures above 1000°C the oxygen in the film disappeared and silicon was found to reach the film surface. A surface structure of concentric circular rings was observed.
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