| Simulations of Temperature Field in HFCVD Diamond Films over Large Area |
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| 作者单位： | Aiying WANG，Chao SUN，Rongfang HUANG and Lishi WENInstitute of Metal Research，Chinese Academy of Sciences，Shenyang 110016，China |
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| 基金项目： | This work was supported by the National Natural ScienceFoundation of China (NSFC) under contract No，the Science and Technology Committee of Liaoning Province fund，Theauthors would like to thank Dr. B.Wang and Dr. G.H.Song fortheir valuable discussions |
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| 摘 要： | A three-dimensional model was developed to investigate the influence of various hot filaments parameters on substrate temperature fields that significantly affect the nucleation and growth of diamond films over large area by hot-filament chemical vapordeposition (HFCVD). Numerical simulated results indicated that substrate temperature varies as a function of hot filamentsnumber, radius, temperature, emissivity, the distance between filaments, and the distance between substrate and filamentsarrangement plane. When these filaments parameters were maintained at the optimal values, the homogeneous substrate temperature region of 76 mm×76 mm with the temperature fluctuation no more than 5% could be obtained by a 80 mm×80 mmhot filaments arrangement plane. Furthermore, the homogeneous region could be enlarged to 100 mm×100 mm under thecondition of supplementary hot filaments with appropriate parameters. All of these calculations provided the basis for speciallyoptimizing the hot filaments parameters to dep
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| 关 键 词： | HFCVD 宝石膜 温度场 模拟 基质温度 金刚石膜 |
Simulations of Temperature Field in HFCVD Diamond Films over Large Area |
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| Authors: | Aiying WANG Chao SUN Rongfang HUANG Lishi WEN |
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| Affiliation: | Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China |
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| Abstract: | A three-dimensional model was developed to investigate the influence of various hot filaments parameters on substrate temper-ature fields that significantly affect the nucleation and growth of diamond films over large area by hot-filament chemical vapordeposition (HFCVD). Numerical simulated results indicated that substrate temperature varies as a function of hot filamentsnumber, radius, temperature, emissivity, the distance between filaments, and the distance between substrate and filamentsarrangement plane. When these filaments parameters were maintained at the optimal values, the homogeneous substrate tem-perature region of 76 mm×76 mm with the temperature fluctuation no more than 5% could be obtained by a 80 mm×80 mmhot filaments arrangement plane. Furthermore, the homogeneous region could be enlarged to 100 mm×100 mm under thecondition of supplementary hot filaments with appropriate parameters. All of these calculations provided the basis for speciallyoptimizing the hot filaments parameters to deposit uniform diamond film over large area by HFCVD. |
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| Keywords: | HFCVD Diamond film Temperature field Simulation |
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