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采用多输入浮栅MOS器件的四值编-译码电路设计
引用本文:杭国强,聂莹莹,金心宇. 采用多输入浮栅MOS器件的四值编-译码电路设计[J]. 固体电子学研究与进展, 2007, 27(3): 421-426
作者姓名:杭国强  聂莹莹  金心宇
作者单位:浙江大学信息与电子工程学系,杭州,310027
摘    要:提出一种采用多输入浮栅MOS管设计具有可控阈值功能的电压型多值逻辑电路的方法.对每个浮栅MOS管的逻辑功能均采用传输开关运算予以表示以实现有效综合。在此基础上提出了一种新的电压型多输入浮栅MOS四值编码器和译码器设计。所提出的电路在结构上得到了非常明显的简化,并可采用标准的双层多晶硅CMOS工艺予以实现。此外,这些电路具有逻辑摆幅完整、延迟小等特点。采用TSMC0.35μm双层多晶硅CMOS工艺参数的HSPICE模拟结果验证了所提出设计方案的正确性。

关 键 词:多值逻辑  浮栅金属氧化物半导体器件  控阈技术  编码-译码电路
文章编号:1000-3819(2007)03-421-06
修稿时间:2005-10-08

Quaternary Encoder and Decoder Circuits Using Multiple-input Floating-gate MOS Transistors
HANG Guoqiang,NIE Yingying,JIN Xinyu. Quaternary Encoder and Decoder Circuits Using Multiple-input Floating-gate MOS Transistors[J]. Research & Progress of Solid State Electronics, 2007, 27(3): 421-426
Authors:HANG Guoqiang  NIE Yingying  JIN Xinyu
Abstract:A design method for voltage-mode multiple-valued logic(MVL) circuits using multiple-input floating-gate MOS(FGMOS) transistors with threshold-controllable function was presented. The logical relation of each floating-gate MOS transistor was formulated by using the transmission operation in order to make effective and practical use of the circuits. By employing the voltage-threshold controlling technique, novel voltage-mode quaternary encoder and decoder using multiple-input floating-gate MOS transistors were designed. The important advantages of the proposed circuits are that they can be implemented by a standard double-polysilicon CMOS process, and are considerable simpler configuration than previously reported ones. Furthermore, they have some other favorable properties including full logic swing and low propagation delay. From the HSPICE simulation results using TSMC 0.35 μm double-polysilicon CMOS technology, the effectiveness of the proposed approach is validated.
Keywords:multiple-valued logic   floating-gate MOS device   threshold-controllable tech- nique   encoder-decoder circuit
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