| 倒装焊器件封装结构设计 |
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| 引用本文： | 敖国军,张国华,蒋长顺,张嘉欣.倒装焊器件封装结构设计[J].电子与封装,2013(9):6-9,17. |
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| 作者姓名： | 敖国军 张国华 蒋长顺 张嘉欣 |
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| 作者单位： | 无锡中微高科电子有限公司 |
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| 摘 要： | 倒装焊是今后高集成度半导体的主要发展方向之一。倒装焊器件封装结构主要由外壳、芯片、引脚(焊球、焊柱、针)、盖板(气密性封装)或散热片(非气密性封装)等组成。文章分别介绍外壳材料、倒装焊区、频率、气密性、功率等方面对倒装焊封装结构的影响。低温共烧陶瓷(LTCC)适合于高频、大面积的倒装焊芯片。大功率倒装焊散热结构主要跟功率、导热界面材料、散热材料及气密性等有关系。倒装焊器件气密性封装主要有平行缝焊或低温合金熔封工艺。
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| 关 键 词： | 倒装焊 封装结构 气密性 高频电路 大功率 |
Package Structure Design of Flip Chip Device |
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| AO Guojun;ZHANG Guohua;JIANG Changshun;ZHANG Jiaxin.Package Structure Design of Flip Chip Device[J].Electronics & Packaging,2013(9):6-9,17. |
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| Authors: | AO Guojun;ZHANG Guohua;JIANG Changshun;ZHANG Jiaxin |
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| Affiliation: | AO Guojun;ZHANG Guohua;JIANG Changshun;ZHANG Jiaxin;Wuxi Zhongwei High-tech Electronics Co.,Ltd; |
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| Abstract: | Flip chip bonding is one of development trend of high-integrated semiconductor for the future. Flip chip device includes carrier substrate, integrated circuit, pin （solder ball, solder column, pin） , lid （hermetic package） or heat spreader （nonhermefic package） . The article describes the relation of flip chip package structure with package material, flip chip bonding area, frequency, air-tightness, power etc. Low temperature co-fired ceramic is fit for the flip chip of high frequency and large area. Power, thermal interface material, heat spreader and air-tightness determine the dissipation structure of high power flip chip. There are parallel seam welding and low temperature solder sealing for hermetic package of flip chip device. |
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| Keywords: | flip chip bonding package structure air-tightness high speed circuit high power |
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