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Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate |
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| Authors: | V N Bessolov E V Konenkova S A Kukushkin V I Nikolaev A V Osipov Sh Sharofidinov M P Shcheglov |
| Affiliation: | 1227. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia 2227. Perfect Crystals Company, St. Petersburg, 198205, Russia 3227. Institute for Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, 199178, Russia |
| Abstract: | The idea of a new method for growing gallium nitride (GaN) epilayers in semi-polar direction by hydride-chloride vapor-phase epitaxy (HVPE) is disclosed. We propose to use Si(210) substrates with the first buffer layer of silicon carbide (3C-SiC) and the second buffer layer of aluminum nitride (AlN). It is experimentally demonstrated for the first time that, under conditions of anisotropic deformation in the GaN/AlN/3C-SiC/Si(210) structure, a GaN epilayer exhibits growth in semi-polar directions. |
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