Iron nitride mask and reactive ion etching of GaN films |
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Authors: | Heon Lee James S Harris Jr |
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Affiliation: | (1) Solid State Electronics Laboratory, Stanford University, 94305 Stanford, CA;(2) Present address: Dram Development Alliance, Siemens Microelectronics Inc., 1580 Route 52, Zip 33A, 12533 Hopewell Junction, NY |
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Abstract: | One of the major GaN processing challenges is useful pattern transfer. Serious photoresist mask erosion and hardening are
often observed in reactive ion etching of GaN. Fine pattern transfer to GaN films using photoresist masks and complete removal
of remaining photoresist after etching are very difficult. By replacing the etch mask from conventional photoresist to a sputtered
iron nitride (Fe-8% N) film, which is easily patterned by wet chemical etching and is very resistive to Cl based plasmas,
GaN films can be finely patterned with vertical etched sidewalls. Successful pattern transfer is realized by reactive ion
etching using Cl (H) containing plasmas. CHF3/Ar, C2ClF5/Ar, C2ClF5/Ar/O2, SiCl4, and CHCl3 plasmas were used to etch GaN. The GaN etch rate is dependent on the crystalline quality of GaN. Higher crystalline quality
GaN films exhibit slower etch rates than GaN films with higher dislocation and stacking fault density. |
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Keywords: | CHCl3 CHF3 C2ClF5 GaN film iron nitride film photoresist mask erosion photoresist mask hardening reactive ion etching (RIE) SiCl4 |
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