XRD研究Fe、C掺杂对He离子注入Al表面晶格畸变的影响

用离子注入技术实现了Al表面Fe、C元素的掺杂,并用XRD研究Fe、C掺杂对He离子注入Al表面晶格畸变的影响。结果发现,预先掺杂的Fe、C在Al表面的晶格畸变中扮演重要角色,且影响程度与掺杂剂量有关。随着预先掺杂Fe剂量的增大,Al表面晶格畸变量先减小后增加,表明小剂量的Fe掺杂有助于降低He离子注入引起的晶格畸变。C掺杂后能进一步降低预先掺杂Fe引起的晶格畸变,降低程度随C剂量的增加而增加。可见,小剂量的Fe和高剂量的C共掺杂能有效降低He离子注入后Al表面的晶格畸变。

Effect of Fe and C Doping on the Lattice Distortion of He Ion Implanted Al Surface by XRD

Effect of Fe and C doping via ion implantation on the lattice distortion of He ion implanted Al surface was studied by X-ray diffraction (XRD). The results show that the pre-doped Fe and C play an important part in the lattice distortion of Al surface, and the influence extent depends on the doping fluence. With the increase of the fluence of pre-doped Fe, the lattice distortion of Al surface decreases first and then increases, indicating that Fe doping of small fluence is beneficial for the reduction of lattice distortion of He implanted Al. C doping can further reduce the lattice distortion caused by the earlier Fe doping, and the reduction extent increases with the fluence of doped C increasing. It is concluded that small fluence of Fe and high fluence of C co-doping can effectively reduce the lattice distortion of the He implanted Al surface