An Ion-Beam Apparatus for the Formation of Oxide Films by the Oxygen Ion Sputtering Technique

A source of oxygen ions operating on the basis of a two-stage self-sustained discharge with a cold hollow cathode is used in an apparatus for target sputtering. An assisting ion flow is produced by a Kaufmann open-end ion source of the Hall type. The sources are mounted in a vacuum volume and are operated simultaneously. Tantalum oxide, silicon oxide, and barium titanate films obtained by using an assisting ion flow are more homogeneous and have a narrower film–substrate transition layer and a composition closer to the stoichiometric one than films obtained under identical conditions but without an ion-flow assistance.