A new multitime programmable non-volatile memory cell using high voltage NMOS |
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| Affiliation: | 1. Infineon Technologies AG, Am Campeon 1–15, 85579 Neubiberg, Germany;2. Friedrich-Alexander-Universität Erlangen-Nürnberg, Schlossplatz 4, 91054 Erlangen, Germany;3. Ostbayerische Technische Hochschule Regensburg, Seybothstraße 2, 93053 Regensburg, Germany;1. Electrical and Mechanical Department, Nagoya Institute of Technology, Nagoya, Japan;2. Electrical and Electricity Department, Tokyo Metropolitan University, Tokyo, Japan;3. IWATSU ELECTRIC Co., Ltd., 1-7-41, Kugayama, Suginami-ku, Tokyo, Japan;1. Infineon Technologies AG, Wernerwerkstr. 2, 93059 Regensburg, Germany;2. Infineon Technologies AG, Am Campeon 1–12, 85579 Neubiberg, Germany |
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| Abstract: | A new multitime programmable (MTP) non-volatile memory (NVM) cell using high voltage NMOS is proposed. A PMOS transistor is used for programming, erasing, and reading, and a high voltage NMOS is used for selecting the memory cell. The memory cell has fewer number of transistors and terminals compared with the typical conventional memory cell. This reduces the area consumption and simplifies the implementation of memory's external circuit. In addition, the subthreshold swing (SS) of the memory cell is improved for larger coupling ratio. Experimental investigation on transfer characteristics, endurance, retention, and threshold voltage VTH shift and leakage current of the high voltage NMOS of the memory cell are presented. The experimental endurance behaviour of the proposed memory cell is superior to the conventional memory cell. |
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