| 高 g值冲击下 MEMS器件可靠性研究 |
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| 引用本文： | 潘晓琳,张亚,李波.高 g值冲击下 MEMS器件可靠性研究[J].机械研究与应用,2013(6):15-16,20. |
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| 作者姓名： | 潘晓琳 张亚 李波 |
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| 作者单位： | 中北大学机电工程学院,山西太原030051 |
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| 摘 要： | 以基于SOI的MEMS开关器件为研究对象，建立了以SOI器件为基本结构的有限元分析模型，此次实验采取的是在SOI层上镀上一层Au，以便进行电路连接，并加载500～5000 g的惯性力进行有限元分析。经ANSYS有限元的分析，在500 g高惯性力的作用下，最容易产生金属层的脱落现象，造成MEMS器件的失效。通过这种方式对不同结构的MEMS开关器件进行有限元分析，限制其阀值加速度，减少由于惯性跌落试验而造成的实物破坏。
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| 关 键 词： | SOI MEMS器件 惯性冲击 脱落失效 |
Reliability Research on Impact of MEMS Devices under High g Value |
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| PAN Xiao-lin,ZHANG Ya,LI Bo.Reliability Research on Impact of MEMS Devices under High g Value[J].Mechanical Research & Application,2013(6):15-16,20. |
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| Authors: | PAN Xiao-lin ZHANG Ya LI Bo |
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| Affiliation: | (Mechanical and Electrical Engineering College, North University of China, Taiyuan Shanxi 030051, China) |
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| Abstract: | The MEMS switch is chosen as the study object based on SOI.A specific finite element analysis model is estab-lished based on the basic structure of SOI.The experiment takes the Au plating on the top layer of SOI which is convenient to connect the circuit and then loading inertia force 500~5 000 g.The analysis shows it is easy to produce the phenomenon of the layer falling under the high 500 g value which may cause the failure of MEMS devices .The finite element analysis is taken for different structure in order to reduce the physical damage which caused by inertial drop test. |
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| Keywords: | SOI MEMS devices inertial impact fall off |
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