Electrical properties of low-temperature GaAs grown by molecular beam epitaxy and migration enhanced epitaxy |
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Authors: | Kai Zhang D. L. Miller |
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Affiliation: | (1) Electronic Materials and Processing Research Laboratory, Department of Materials Science and Engineering, The Pennsylvania State University, 16802 University Park, PA;(2) Department of Electrical and Computer Engineering, The Pennsylvania State University, 16802 University Park, PA |
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Abstract: | Measurements on low-temperature GaAs epitaxial layers (LT-GaAs) grown by molecular beam epitaxy and migration enhanced epitaxy showed that the excess arsenic incorporated during growth played a crucial role in determining their electrical properties. The electrical transport in LT-GaAs grown by a standard molecular beam epitaxy proceeded mainly via a hopping process, which showed a higher activation energy and onset temperature than those usually observed in lightly doped semiconductors. Using migration enhanced epitaxy to grow LT-GaAs, we were able to substantially reduce the density of As-rich defects and to achieve a good Hall mobility in Be-doped LT-GaAs. The study presented here indicates that, with controlled excess arsenic incorporation during growth, LT-GaAs can vary in a range of conduction properties and thus can be engineered for different device applications. |
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Keywords: | Low-temperature-grown GaAs MBE migration enhanced epitaxy |
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