首页 | 本学科首页   官方微博 | 高级检索  
     

电子浴辅助阴极电弧源活性反应离子镀合成AlN薄膜
引用本文:潘俊德,田林海,莘海维,贺琦,李力. 电子浴辅助阴极电弧源活性反应离子镀合成AlN薄膜[J]. 热加工工艺, 2000, 0(4)
作者姓名:潘俊德  田林海  莘海维  贺琦  李力
作者单位:太原理工大学,表面工程研究所,山西,太原,030024
基金项目:山西省青年基金资助项目!(981026)
摘    要:利用电子浴辅助阴极电弧源活性反应离子镀法 ,在 Si、Mo和不锈钢等基材上合成 Al N薄膜 ;采用 SEM、XRD及 IR对薄膜的表面形貌、晶体结构进行了分析。结果表明 ,用此法可以合成高质量的 Al N薄膜 ,而且具有合成速度快、设备简单等优点 ,有较好的开发和应用前景

关 键 词:电子浴辅助  冷阴极电弧  反应离子镀  AlN薄膜

Synthesis of Aluminium Nitride Films Using Plating with Activated Reactive Ion Assisted by Electrons
PAN Jun-de,TIAN Lin-hai,XIN Hai-wei,HE Qi,LI Li. Synthesis of Aluminium Nitride Films Using Plating with Activated Reactive Ion Assisted by Electrons[J]. Hot Working Technology, 2000, 0(4)
Authors:PAN Jun-de  TIAN Lin-hai  XIN Hai-wei  HE Qi  LI Li
Abstract:AlN films in the surface of Si,Mo and stainless steel were synthesized by activated reactive ion plating with cathode arc source assisted by electrons bath,and the surface morphology and structure of the synthesized films were eletuated using SEM,XRD and IR.The results shew that high guality AlN films were obtained.This method of synthesizing AlN films prossesses many advantages,including simple device structure,high deposition rate,et al.It can be well developed and applied in the future.
Keywords:assisted by electrons bath  cold cathode arc  activated reactive ion plating  AlN films  
本文献已被 CNKI 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号