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应用微波技术抑制光刻胶图形的坍塌与黏连
引用本文:于明岩,施云波,赵士瑞,郭晓龙,徐昕伟,景玉鹏,陈宝钦.应用微波技术抑制光刻胶图形的坍塌与黏连[J].光学精密工程,2015,23(1):149-156.
作者姓名:于明岩  施云波  赵士瑞  郭晓龙  徐昕伟  景玉鹏  陈宝钦
作者单位:1. 中国科学院 微电子研究所 中国科学院微电子器件与集成技术重点实验室, 北京 100029;2. 哈尔滨理工大学 测控技术与通信工程学院 测控技术与仪器黑龙江省高校重点实验室, 黑龙江 哈尔滨 150080
基金项目:国家科技重大专项资助项目(No.2009ZX02037-007);国家973重点基础研究发展计划资助项目(No.2006CB932600);国家自然科学基金资助项目(No.61078060)
摘    要:针对显影工艺中水的表面张力导致的高高宽比抗蚀剂图形的坍塌及黏连,提出了一种基于微波加热的干燥技术来有效改善纳米抗蚀剂图形的干燥效果。该方法利用微波穿透光刻胶结构直接加热光刻胶图形间隙中残存的去离子水,水分子吸收微波的光子能量迅速蒸发,从而有效地抑制光刻胶图形的坍塌与黏连现象。利用提出的基于微波加热的干燥方法,成功获取了高260nm、宽16nm的光刻胶线条组和直径为20nm的光刻胶柱形阵列,其中高高宽比线条组和由15 625根柱子组成的柱形阵列结构没有出现坍塌及黏连情况,验证了在微波产生的交变电场作用下,可以减小水分子团簇,降低水的表面张力。

关 键 词:电子束光刻  光刻胶图形  坍塌  黏连  高宽比  微波加热
收稿时间:2014/6/5

Suppression of collapse and adhesion of photoresist based on microwave heating
YU Ming-yan;SHI Yun-bo;ZHAO Shi-rui;GUO Xiao-long;XU Xin-wei;JING Yu-peng;CHEN Bao-qin.Suppression of collapse and adhesion of photoresist based on microwave heating[J].Optics and Precision Engineering,2015,23(1):149-156.
Authors:YU Ming-yan;SHI Yun-bo;ZHAO Shi-rui;GUO Xiao-long;XU Xin-wei;JING Yu-peng;CHEN Bao-qin
Affiliation:1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;2. The Higher Educational Key Laboratory for Measuring & Control Technology and Instrumentation of Heilongjiang Province, Institute of Measurement-control Technology & Communication Engineering, Harbin University of Science and Technology, Harbin 150080, China
Abstract:For the collapse and adhesion of photoresist with nano-structures due to the surface tension of deionized water in electron beam lithography, a drying method based on microwave heating is proposed to improve the quality of the photoresist with nano-structures. The method makes use of the microwave penetrate the photoresist to heat the water stored between resist patterns directly, and the water will evaporate with absorbing energy of microwave. Thus the collapse and adhesion of the photoresist with nano-structures can be avoided. The proposed method is used for drying photoresist lines with a height of 260 nm, width of 16 nm and photoresist pillars with the diameter of 20 nm in electron beam lithography and development. The results show that the lines and the array containing of 15 625 pillars are no collapse and adhesion, which demonstrates that the microwave with an alternating electric field can reduce the sizes of water clusters and the tension of deionized water dramatically.
Keywords:electron beam lithography  photoresist  collapse  adhesion  high aspect ratio  micro wave heating
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