用化学热解沉积法制备硫化镉薄膜的微结构

在载玻片或ITO涂覆的玻璃上采用化学热解法沉积CdS固体薄膜，沉积温度在350-540℃之间，部分制备的CdS薄膜进行200-600℃的退火热处理，由SEM，AFMT和XRD分析测量退火热处理前后的CdS薄膜的微观结构，结果表明，沉积温度低于540℃以下制备的CdS薄膜具有类六方结构相当于540℃沉积的CdS薄膜的晶料尺寸依赖于沉积温度及不同基体的情况也在本文中进行了讨论。

MICROSTRUCTURE OF CdS FILMS PREPARED WITH CHEMICAL PYROLYSIS DEPOSITION

CdS solid thin filmswere prepared on the substrates of slide glass or ITO coated glass by using chemicalpyrolysis deposition technique(CPD) at different deposition temperature from 350 to 540℃ during film growth. Some of theprepared CdS films were undergone thermal annealing treatments at temperature from 200 to600℃. Themicrostructures of as-deposited CdS films before and after thermal annealing wereinvestigated with SEM, AFM and XRD measurements.It is found that hexagonal structure-likephase can be obtained for CdS films prepared with CPD when the deposition temperature isbelow 540℃. Wurtzitephase appears when CdS films are prepared at deposition temperature higher than 540℃, or the CdS films are preparedwith CPD at deposition temperature of 400℃ and post-annealed at the temperature above 500℃. The grain size of CdS films, which is dependent ondeposition temperature and on different substrates, is also discussed.