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Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si Using Ge Interfacial Layer |
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| Authors: | S.R. Rao S.S. Shintri I.B. Bhat |
| Affiliation: | (1) Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, USA;(2) Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, USA |
| Abstract: | We have achieved metalorganic vapor-phase epitaxial growth of (211)B CdTe on Si without the requirement of a pregrowth high-temperature oxide desorption step. This was achieved by growing a thin Ge film on the starting (211) Si substrates. To get (211)B CdTe orientation, the Ge surface was exposed to As prior to the start of CdTe growth. A thin ZnTe interlayer between Ge and CdTe has been shown to improve the CdTe surface morphology. |
| Keywords: | MOVPE (211) orientation CdTe silicon germanium arsenic |
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