A thermodynamic reassessment of the Al-As-Ga system |
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Authors: | Ch. Li J. -B. Li Z. Du L. Lu W. Zhang |
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Affiliation: | (1) School of Materials Science and Engineering, University of Science and Technology Beijing, 100083 Beijing, People’s Republic of China;(2) Present address: Central Iron and Steel Institute, Beijing |
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Abstract: | The Al-As-Ga system is one of the most important III-V mixed crystal systems because of its advantages as a heterostructure. There are more phase equilibria data available for this system over a wider range of temperatures and compositions, than for any other III-V ternary system. In this paper, the experimental phase diagram data of the Al-As-Ga ternary system have been assessed comprehensively and critically. Especially, the most recent experiments are considered. The interaction parameters of the liquid phase and the semiconductor compound are provided. With the assessed thermodynamic parameters, the pseudobinary AlAs-GaAs phase diagram, the Al-As-Ga ternary isothermal sections, and the solidus isoconcentration curves were calculated and compared with the related experimental data. |
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