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Improved Ni Schottky Contacts on |
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| Authors: | T. N. Oder T. L. Sung M. Barlow J. R. Williams A. C. Ahyi T. Isaacs-Smith |
| Affiliation: | (1) Department of Physics and Astronomy, Youngstown State University, Youngstown, OH 44555, USA;(2) Department of Physics, Auburn University, Auburn, AL 36849, USA;(3) Present address: Graduate School of Engineering, Lunghwa University of Science and Technology, Guishan, Shiang, Taoyuan County, Taiwan;(4) Present address: Akustica, Inc., 2835 East Carson Street, Suite 301, Pittsburgh, PA 15203, USA |
| Abstract: | High-temperature processing was used to improve the barrier properties of three sets of n-type 4H-SiC Schottky diodes fabricated with Ni Schottky contacts. We obtained an optimum average barrier height of 1.78 eV and an ideality factor of 1.09 using current–voltage measurements on diodes annealed in vacuum at 500°C for 24 h. Nonannealed contacts had an average barrier height of 1.48 eV and an ideality factor of 1.85. The Rutherford backscattering spectra of the Ni/SiC contacts revealed the formation of a nickel silicide at the interface, accompanied by a substantial reduction in oxygen following annealing. |
| Keywords: | Ni Schottky contacts Schottky barrier diodes 4H-SiC power device |
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