| GaAsP混晶中Fe杂质能级的无序分裂 |
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| 引用本文： | 黄启圣. GaAsP混晶中Fe杂质能级的无序分裂[J]. 半导体学报, 1989, 10(7): 553-555 |
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| 作者姓名： | 黄启圣 |
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| 作者单位： | 厦门大学物理系 厦门市 |
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| 摘 要： | GaAsP混晶中Fe杂质基态与激发态的光离化截面的幅度比S(x)随组分x有规律地变化,本文提出一种理论估算,认为它是Fe能级无序分裂的结果.
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| 关 键 词： | 深杂质中心 混晶半导体 混晶无序 |
Alloy Disordered Splitting of Fe-Levels in GaAsP |
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| Huang Qisheng/. Alloy Disordered Splitting of Fe-Levels in GaAsP[J]. Chinese Journal of Semiconductors, 1989, 10(7): 553-555 |
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| Authors: | Huang Qisheng/ |
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| Affiliation: | Huang Qisheng/Department of Physics,Xiamen University,Xiamen |
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| Abstract: | A simplified theoretical calculation is described for the regular Change of the S(x), the ra-tio of the hole photoionization cross sections between ground states and excited states of Fe-centers in GaAsP.It is believed that it is due to the alloy disordered splitting of Fe-levels. |
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| Keywords: | Deep impurity Center Alloy semiconductor Alloy disorder |
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