A SOI-MEMS-based 3-DOF planar parallel-kinematics nanopositioning stage |
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Authors: | Deepkishore Jingyan Eakkachai Placid |
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Affiliation: | aDepartment of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, 1206 W. Green Street, Urbana, IL 61801, USA |
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Abstract: | This paper presents the design, kinematic and dynamic analysis, fabrication and characterization of a monolithic micro/nanopositioning three degrees-of-freedom (DOF) (XYθ) stage. The design of the proposed MEMS (micro-electro-mechanical system) stage is based on a parallel-kinematic mechanism (PKM) scheme that allows for translation in the XY plane and rotation about the Z axis, an increased motion range, and linear kinematics in the operating region (or work area) of the stage. The truss-like structure of the PKM results in higher modal frequencies by increasing the structural stiffness and reducing the moving mass of the stage. The stage is fabricated on a silicon-on-insulator (SOI) wafer using surface micromachining and deep reactive ion etching (DRIE) processes. Three sets of electrostatic linear comb drives jointly actuate the mechanism to produce motion in the X, Y and θ (rotation) directions. The fabricated stage provides a motion range of 18 μm and 1.72° at a driving voltage of 85 V. The resonant frequency of the stage under ambient conditions is 465 Hz. Additionally a high Q factor (66) is achieved from this parallel-kinematics mechanism design. |
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Keywords: | SOI-MEMS 3-DOF planar PKMs Micro/nanopositioning stages MEMS– XYθ stages |
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