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In-situ spectroscopic ellipsometry of HgCdTe |
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| Authors: | J D Benson A B Cornfeld M Martinka K M Singley Z Derzko P J Shorten J H Dinan P R Boyd F C Wolfgram B Johs P He John A Woollam |
| Affiliation: | (1) Night Vision and Electronics Sensors Directorate, 22060 Ft. Belvoir, VA;(2) Army Research Lab, 22060 Ft Belvoir, VA;(3) J.A. Woollam Co. Inc., 68508 Lincoln, NE |
| Abstract: | An in-situ spectroscopic ellipsometer has been equipped on a molecular beam epitaxy system to improve control of HgCdTe growth. Using this device, in-situ analysis of composition, growth rate, and surface cleanliness were monitored. A real time model which determined the compositional profile was used. The ellipsometer was employed to give in-situ real time control of the growth process. |
| Keywords: | Molecular beam epitaxy spectroscopic ellipsometry |
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