| BF_2~+注入束的沾污和对结深的影响 |
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| 引用本文： | 李金华,邹世昌. BF_2~+注入束的沾污和对结深的影响[J]. 半导体学报, 1990, 11(4): 294-300 |
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| 作者姓名： | 李金华 邹世昌 |
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| 作者单位： | 常州半导体厂(李金华)，中国科学院上海冶金研究所离子束开放实验室(邹世昌) |
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| 摘 要： | 注入系统中剩余气体分子与B_2~+离子的碰撞,造成了不同能量的BF~+,F~+、B~+离子束对BF_2~+注入束的沾污。注入样品的SIMS分析结果和理论计算都证明,这种沾污使BF_2~+注入的结深明显增加,不利于浅结的制备。用静电束过滤器可部分消除这些沾污束,在先加速后分析的注入机中,也未观察到BF_2~+束的沾污。此外,提高系统真空度会明显降低沾污峰的强度。
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| 关 键 词： | 离子注入 浅结制备 集成电路工艺 离子束分析 |
Contamination of BF_2~+ Beam and the Effects on Implantation Junction Depth |
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| Li Jinhua/Ion Beam Laboratory. Contamination of BF_2~+ Beam and the Effects on Implantation Junction Depth[J]. Chinese Journal of Semiconductors, 1990, 11(4): 294-300 |
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| Authors: | Li Jinhua/Ion Beam Laboratory |
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| Affiliation: | Li Jinhua/Ion Beam Laboratory,Shanghai Institute of Metallurgy,Academia Sinica,ShanghaiZou Shichang/Ion Beam Laboratory,Shanghai Institute of Metallurgy,Academia Sinica,Shanghai |
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| Abstract: | The BF_2~+ beam can be contaminated by BF~+,F~+ and B~+ beams with different energies dueto the collisions between BF_2~+ and the remaining gas moleculae in the system. It is unfavourablefor shallow junction formation because the junction depth would be increased remarkably asshown by the SIMS results. Three methods of removing or decreasing the contamination beamsare presented. |
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| Keywords: | Ion implantation Shallow junction fabrication IC process Ion beam analysis |
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