| 低能量He离子注入局域寿命控制LIGBT的实验研究 |
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| 引用本文： | 方健,唐新伟,李肇基,张波. 低能量He离子注入局域寿命控制LIGBT的实验研究[J]. 半导体学报, 2004, 25(9): 1048-1054 |
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| 作者姓名： | 方健 唐新伟 李肇基 张波 |
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| 作者单位： | 电子科技大学微电子与固体电子学院,成都,610054;电子科技大学微电子与固体电子学院,成都,610054;电子科技大学微电子与固体电子学院,成都,610054;电子科技大学微电子与固体电子学院,成都,610054 |
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| 摘 要： | 提出了一种采用低能量大剂量He离子注入局域寿命控制的高速L IGBT,并对其进行了实验研究.粒子辐照实验结果显示与常规的L IGBT相比较,该器件的关断时间和正向压降的折中关系得到了改善.同时研究了当局域寿命控制区位于p+ - n结附近,甚至在p+阳极内时,该器件的正向压降和关断时间.结果显示当局域寿命控制区在p+ 阳极内时,仍然对关断时间和正向压降有影响
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| 关 键 词： | LIGBT 局域寿命控制 He离子注入 |
Numerical and Experimental Study of Localized Lifetime Control LIGBT by High Dose He Ion Implantation |
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| Fang Jian,Tang Xinwei,Li Zhaoji,Zhang Bo. Numerical and Experimental Study of Localized Lifetime Control LIGBT by High Dose He Ion Implantation[J]. Chinese Journal of Semiconductors, 2004, 25(9): 1048-1054 |
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| Authors: | Fang Jian Tang Xinwei Li Zhaoji Zhang Bo |
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| Abstract: | A high speed LIGBT with localized lifetime control by using high dose and low en ergy helium implantation(LC-LIGBT) is proposed.Compared with conventional LIGB Ts,particle irradiation results show that trade-off relationship between turn- off time and forward voltage drop is improved.At the same time,the forward volta ge drop and turn-off time of such device are researched,when localized lifetime control region place near the p -n junction,even in p anode.The results s how for the first time,helium ions,which stop in the p anode,also contribute to the forward voltage drop increasing and turn-off time reducing. |
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| Keywords: | LIGBT localized lifetime control helium ion implantation |
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