| 100mW8～12GHz微波FET宽带放大器 |
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| 引用本文： | 王晓钧.100mW8～12GHz微波FET宽带放大器[J].微纳电子技术,1991(5). |
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| 作者姓名： | 王晓钧 |
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| 作者单位： | 机电部第13研究所 石家庄，050051 |
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| 摘 要： | 本文介绍了一种宽带大动态放大器及其电路设计和实验结果。其主要技术指标为:在8～12GHz频带范围内,G_p≥20dB,△G_p≤±1.5dB,P_0≥100mW。该场放具有体积小、重量轻、可靠性高等特点。
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| 关 键 词： | 砷化镓 场效应晶体管 宽带放大器 |
100mW 8～12GHz Broad-Band Microwave FET Amplifier |
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| Wang Xiaojun Th th Institute,Ministry of MEI,Shijiazhuang.100mW 8～12GHz Broad-Band Microwave FET Amplifier[J].Micronanoelectronic Technology,1991(5). |
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| Authors: | Wang Xiaojun Th th Institute Ministry of MEI Shijiazhuang |
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| Affiliation: | Wang Xiaojun Th 13th Institute,Ministry of MEI,Shijiazhuang,050051 |
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| Abstract: | In this paper, a wide-dynamic broad-band ampli- fier, its circuit design, and the experimental results are descri- bed. The major technical performances are given: G_p≥20dB, △G_p ≤±1. 5dB, and P_0≥100m W within 8～12GHz, The amplifier is of small size, lightweight, and high reliability. |
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| Keywords: | Gallium arsenide Field effect transistor Broadband amplifier |
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