| 离子注入4H-SiC MESFET器件的夹断电压 |
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| 引用本文： | 王守国,张义门,张玉明. 离子注入4H-SiC MESFET器件的夹断电压[J]. 半导体学报, 2003, 24(7): 697-701 |
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| 作者姓名： | 王守国 张义门 张玉明 |
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| 作者单位： | [1]西安电子科技大学微电子所,西安710071;西北大学电子系,西安710069 [2]西安电子科技大学微电子所,西安710071 |
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| 基金项目： | 国防预研基金;8.1.7.3; |
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| 摘 要： | 考虑离子注入沟道和沟道深度的影响,提出了精确的离子注入4 H- Si C MESFET器件夹断电压的理论计算方法.注入浓度由蒙特卡罗模拟软件TRIM提取计算.研究了温度、外延层受主浓度、注入离子激活率对夹断电压的影响.
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| 关 键 词： | 碳化硅 离子注入 MESFET 夹断电压 |
Theoretical Investigation of Pinch off Voltage of Box-Like Ion-Implanted 4H-SiC MESFETs |
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| Wang Shouguo,Zhang Yimen,Zhang Yuming. Theoretical Investigation of Pinch off Voltage of Box-Like Ion-Implanted 4H-SiC MESFETs[J]. Chinese Journal of Semiconductors, 2003, 24(7): 697-701 |
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| Authors: | Wang Shouguo Zhang Yimen Zhang Yuming |
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| Abstract: | A precise theoretical calculation off the pinch of voltage of the box-like ion implantation 4H-SiC MESFETs is investigated with the consideration of the effects of the ion-implanted channel and the depth of MESFETs channel.The implant depth profile is simulated using the Monte Carlo simulator TRIM.The effects of parameters such as temperature,acceptor density,and activation rate on channel depth a,pinch off voltage are studied. |
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| Keywords: | silicon carbide ion implantation MESFET pinch off voltage |
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