硅各向异性腐蚀中生成直角补偿结构的新方法

Detailed characteristics of three classical rectangular convex corner compensation structures on（100） silicon substrates have been investigated, and their common design steps are summarized.By combining the basic method of a silicon wet anisotropic etching process, a general method of generating compensation structures for a rectangular convex corner is put forward.This calls for the following two steps：define the topological field and fit some borderlines together into practical compensation patterns.The rules, which must be obeyed during this process, are summarized.By introducing this method, some novel compensation patterns for rectangular convex corner structures are created on both（100） and（110） substrates, and finally simulation results are given to prove this new method＇s validity and applicability.

A novel method for generating a rectangular convex corner compensation structure in an anisotropic etching process

Detailed characteristics of three classical rectangular convex corner compensation structures on (100) silicon substrates have been investigated, and their common design steps are summarized. By combining the basic method of a silicon wet anisotropic etching process, a general method of generating compensation structures for a rectangular convex corner is put forward. This calls for the following two steps: define the topological field and fit some borderlines together into practical compensation patterns. The rules, which must be obeyed during this process, are summarized. By introducing this method, some novel compensation patterns for rectangular convex corner structures are created on both (100) and (110) substrates, and finally simulation results are given to prove this new method's validity and applicability.