Pechinin synthesis and luminescence properties of Y3Ga5O12(YGG):Tb thin film

YGG:Tb thin films were successfully prepared by Pechni sol-gel process. The structure, surface morphology, evolution of film crystallization and their luminescent properties were investigated. We find the annealing process is very important to the YGG:Tb film crystallization. Uniform crack-free films can be obtained by conventional annealing for 1 h after rapid thermal treating for 10 min at 800 °C. The excitation and emission spectra of photoluminescence (PL) were used to characterize the luminescent properties. The excitation spectrum of YGG:Tb is dominated by the 4f-4f5d transition of Tb³⁺at 260 nm. The emission peaks of phosphor thin film lie at 488 and 543 nm. It can be used as a promising phosphor material for FED or ELD application.