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A 29-mm2, 1.8-V-only, 16-Mb DINOR flash memory withgate-protected-poly-diode (GPPD) charge pump |
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| Authors: | Miyawaki Y. Ishizaki O. Okihara Y. Inaba T. Niita F. Mihara M. Hayasaka T. Kobayashi K. Omae T. Kimura H. Shimizu S. Makimoto H. Kawajiri Y. Wada M. Sonoyama H. Etoh J. |
| Affiliation: | Memory IC Div., Mitsubishi Electr. Corp., Hyogo ; |
| Abstract: | A 29-mm2, 16-Mb divided bitline NOR (DINOR) flash memory is fabricated using 0.25-μm triple-well three-layer-metal CMOS technology. Read access time is 72 ns at 1.8 V. A poly diode charge-pump technique improves pump efficiency and eliminates the body effect problem |
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