Deposition of transparent conductive mesoporous indium tin oxide thin films by a dip coating process |
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Authors: | Xueao Zhang Wenjian Wu Tian Tian Yahui Man Jianfang Wang |
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Affiliation: | College of Aerospace and Materials Engineering, National University of Defense Technology, Changsha 410073, People's Republic of China |
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Abstract: | Cetyltrimethyl ammonium bromide (CTAB) templated mesoporous indium tin oxide (ITO) thin films were deposited on quartz plates by an evaporation-induced self-assembly (EISA) process using a dip coating method. The starting solution was prepared by mixing indium chloride, tin chloride, and CTAB dissolved in ethanol. Five to fifty mole percent Sn-doped ITO films were prepared by heat-treatment at 400 °C for 5 h. The structural, adsorptive, electrical, and optical properties of mesoporous ITO thin films were investigated. Results indicate that the mesoporous ITO thin films have an ordered two-dimensional hexagonal (p6mm) structure, with nanocrystalline domains in the inorganic oxide framework. The continuous thin films have highly ordered pore sizes (>20 Å), high Brunauer-Emmett-Teller (BET) surface area up to 340 m2/g, large pore volume (>0.21 cm3/g), outstanding transparency in the visible range (>80%), and show a minimum resistivity of ρ = 1.2 × 10−2 Ω cm. |
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Keywords: | A Thin films B Sol-gel chemistry C X-ray diffraction D Optical properties D Semiconductivity |
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