Electrical properties of Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films on TiO2 buffer layer |
| |
Authors: | Xihong Hao Xi Yao |
| |
Affiliation: | Functional Materials Research Laboratory, Tongji University, Siping Road 1239, Shanghai 200092, China |
| |
Abstract: | Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films with thickness of 500 nm were successfully deposited on TiO2 buffered Pt(1 1 1)/Ti/SiO2/Si(1 0 0) and Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates via sol-gel process. Microstructure of Pb0.97La0.02(Zr0.95Ti0.05)O3 thin films was studied by X-ray diffraction analyses. The antiferroelectric nature of the Pb0.97La0.02(Zr0.95Ti0.05)O3 thin films was confirmed by the double hysteresis behaviors of polarization and double buffer fly response of dielectric constant versus applied voltage at room temperature. The capacitance-voltage behaviors of the Pb0.97La0.02(Zr0.95Ti0.05)O3 films with and without TiO2 buffer layer were studied, as a function of temperature. The temperature dependence of dielectric constant displayed a similar behavior and the Curie temperature (Tc) was 193 °C for films on both substrates. The current caused by the polarization and depolarization of polar in the Pb0.97La0.02(Zr0.95Ti0.05)O3 films was detected by current density-electric field measurement. |
| |
Keywords: | A Thin films B Sol-gel chemistry D Electrical properties |
本文献已被 ScienceDirect 等数据库收录! |