Electrical properties of polymer films prepared from mixture of tetramethylsilane and oxygen by glow discharge polymerization |
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Authors: | K S Chen N Inagaki K Katsuura |
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Affiliation: | (1) Laboratory of Polymer Chemistry, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, 432 Hamamatsu, Japan |
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Abstract: | Summary The electrical properties of polymer films prepared from tetramethylsilane (TMS) and the mixture of TMS and oxygen by glow discharge polymerization were investigated in connection with the chemical structure of the polymers. The polymer films showed two different electrical properties which depended on the strength of electrical field. Under the electrical field of less than 104 V/cm, the polymers showed ohmic behaviour, and their resistivity was approximately 1014 · cm being independent of the chemical structure of the polymers. Under the electrical field of above 104 V/cm, non-ohmic behaviour was observed, and the current increased exponentially with increasing of the applied field. To explain this enhanced current the contribution of the Poole-Frenkel emission was assumed. The dielectric breakdown of the polymer films (1000–5000 angstroms) occured at the electrical field as high as 3 MV/cm. This indicates that these thin films may be deposited on substrates without pinhole. |
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