| SiGe HBT的发展及其在微波/射频通讯中的应用 |
| |
| 引用本文： | 周卫,刘道广,严利人. SiGe HBT的发展及其在微波/射频通讯中的应用[J]. 微电子学, 2006, 36(5): 552-558 |
| |
| 作者姓名： | 周卫 刘道广 严利人 |
| |
| 作者单位： | 1. 清华大学,微电子学研究所,北京,100084
2. 清华大学,微电子学研究所,北京,100084;模拟集成电路国家重点实验室,中国电子科技集团公司,第二十四研究所,重庆,400060 |
| |
| 摘 要： | 经过二十年的发展,SiGe HBT技术已经广泛应用于微波/射频通讯领域。它的快速发展首先得益于外延技术的提高,其次是它与硅工艺完全兼容,特别是与CMOS工艺兼容的特性,以及微波/射频通讯市场的巨大需求。文章简要回顾了SiGe HBT的发展过程,认为SiGe技术今后将成为混合信号通讯系统SOC集成的技术平台。
|
| 关 键 词： | SiGe外延 SiGeHBT SiGeBiCMOS 微波/射频通讯 |
| 文章编号： | 1004-3365（2006）05-0552-07 |
| 收稿时间： | 2006-05-10 |
| 修稿时间： | 2006-05-102006-07-08 |
The Development of SiGe HBT Technology and Its Applications in Microwave/RF Communication Systems |
| |
| ZHOU Wei,LIU Dao-guang,YAN Li-ren. The Development of SiGe HBT Technology and Its Applications in Microwave/RF Communication Systems[J]. Microelectronics, 2006, 36(5): 552-558 |
| |
| Authors: | ZHOU Wei LIU Dao-guang YAN Li-ren |
| |
| Affiliation: | 1.Institute of Microelectronics , Tsinghua University, Beij ing 100084, P. R. China National Laboratory of Analog Integrated Circuits; Sichuan Institute of Solid State Circuits, Chongqing 400060, P. R. China |
| |
| Abstract: | SiGe HBT technology has been widely used in microwave/RF communication after 20 years of advancement.Its rapid development benefits from improved epitaxial technology,full compatibility with silicon process,especially with existing CMOS process,and huge demands from microwave/RF communication markets.The evolution of SiGe HBT technology is briefly reviewed.It is believed that the SiGe HBT technology will serve as a technology platform for SOC of mixed-signal communication system in the near future. |
| |
| Keywords: | SiGe epitaxy SiGe HBT SiGe BiCMOS Microwave/RF communication |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
