| 线性斜量子阱AlxGa1—xAs中的电子态 |
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| 引用本文： | 宋荣利. 线性斜量子阱AlxGa1—xAs中的电子态[J]. 半导体杂志, 2000, 25(1): 27-30 |
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| 作者姓名： | 宋荣利 |
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| 作者单位： | 太原理工大学物理系!太原，030024 |
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| 摘 要： | 采用有效质量方法 ,计算了夹在两无限宽势垒层Al0 4Ga0 6As中的单个斜量子阱AlxGa1 -xAs中的束缚态电子包络函数和能级 ,并讨论了阱宽对能级的影响。
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| 关 键 词： | 电子态 斜量子阱 有效质量方法 |
Electronic States in the Graded Quantum Well Al_xGa_(1-x) As |
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| SONG Rong li. Electronic States in the Graded Quantum Well Al_xGa_(1-x) As[J]. , 2000, 25(1): 27-30 |
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| Authors: | SONG Rong li |
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| Abstract: | The electronic wave function envelop and energy levels of bound state in the single graded quantum well Al xGa 1-x As between two infinite Al 0 4 Ga 0 6 As barriers is calculated by means of effective mass method, and the effect of well width on energy levels is also discussed. |
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| Keywords: | electronic states graded quantum well effective mass method |
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