| 双极晶体管关键参数的研究 |
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| 引用本文： | 赵桂清,吴国增.双极晶体管关键参数的研究[J].电子测试,2008(7):29-33. |
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| 作者姓名： | 赵桂清 吴国增 |
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| 作者单位： | 聊城大学东昌学院,聊城,252000 |
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| 摘 要： | 本文基于双极晶体管的工艺,就如何对电流增益和特征频率两个参数进行优化研究.首先对其进行了器件工艺模拟分析优化,得到模拟特征频率在10 GHz,电流增益为160,而后进行了流片,通过测试得到特征频率为9.5 GHz,电流增益在160以上,最后进行了测试结果和模拟结果的比较分析.
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| 关 键 词： | 双极晶体管 低噪声放大器 增益 特征频率 |
Bipolar transistors on key parameters |
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| Zhao Guiqing,Wu Guozeng.Bipolar transistors on key parameters[J].Electronic Test,2008(7):29-33. |
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| Authors: | Zhao Guiqing Wu Guozeng |
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| Affiliation: | Zhao Guiqing,Wu Guozeng(Dongchang College,Liaocheng University,Liaocheng 252000,China) |
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| Abstract: | Based on the bipolar transistor process,on how the current gain and frequency characteristics to optimize two parameters were studied.First of all its simulation of the device process optimization,simulation characteristic frequency by 10 GHz,current gain of 160.Finally,and the flow-through tests are characteristic frequency of 9.5 GHz,160 more than in the current gain.Finally,the test results and comparative analysis of the simulation results. |
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| Keywords: | bipolar transistor low-noise amplifier gain characteristic frequency |
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