硅中氧行为研究的新进展

本文根据硅片表层器件有源区中的缺陷对器件性能有着严重的影响，以及在制备器件时会引入的杂质和缺陷的事实，提出了使用内吸除技术来改进硅材料与器件的质量，并对与内吸除有关的因素，即硅中氧行为，如硅中氧施主，氧沉淀及其衍生缺陷，硅片中的吸净层，硅片中的氧与翘曲的成因机制等，作了概要介绍。

Progress of the Study on the Behaviors of Oxygen in Silicon

According to the facts that the defects in the active zone of the surface layer devices of silicon wafers have serious influences on the performance of devices,and that the impurities and defects are lead into the devices in their preparation,an inner gettering technology is put forword to improve the quality of silicon material and devices. A brief introduction of the factors concerning inner gettering, i. e. the behaviors of oxygen in silicon, such as oxygen donors in silicon, oxygen precipitatation and the defects derived from it,denuded zone in silicon wafers,influence of oxygen on the mechanism of formation of warpage in silicon wafers, etc, is brought out in this paper.