| 离子束感生电荷显微术的研究 |
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| 引用本文： | 王基庆,李晓林,郭盘林,裘惠源,朱节清. 离子束感生电荷显微术的研究[J]. 半导体技术, 2000, 25(2): 35-37,52 |
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| 作者姓名： | 王基庆 李晓林 郭盘林 裘惠源 朱节清 |
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| 作者单位： | 中科院上海原子核研究所,核分析开放实验室,上海 201800 |
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| 摘 要： | 使用低束流技术 ,在高分辨率扫描质子微探针装置上开展了离子束感生电荷显微术 ,并研究了半导体材料 Ga As的电子学性能。实验结果表明 ,在同一扫描区域内 ,材料的电荷收集效率具有不均匀特性 ,而且氦离子激发产生的 IBIC显微图谱的对比度比质子要强。
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| 关 键 词： | 核子微探针 离子束感生电荷 低束流技术 显微术 |
Ion Beam Induced Charge Microscopy |
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| Wang Jiqing,Li Xiaolin,Guo Panlin,Qiu Huiyuan,Zhu Jieqing. Ion Beam Induced Charge Microscopy[J]. Semiconductor Technology, 2000, 25(2): 35-37,52 |
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| Authors: | Wang Jiqing Li Xiaolin Guo Panlin Qiu Huiyuan Zhu Jieqing |
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| Abstract: | Ion beam induced charge microscopy was studied in nuclear microprobe using low beam current technology,the electrical property of GaAs semiconductor material was also studied.The result shows,the material has inhomogeneous property in charge collection efficiency within the scanning area and the contrast of IBIC image by using He ion is higher than by using proton. |
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| Keywords: | Nuclear microprobe Ion beam induced charge Low beam current technology |
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