Highly Oriented, Chemically Prepared Pb(Zr, Ti)O3 Thin Films |
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| Authors: | Bruce A. Tuttle James A. Voigt David C. Goodnow Diana L. Lamppa Thomas J. Headley Michael O. Eatough Gary Zender Robert D. Nasby Steven M. Rodgers |
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| Affiliation: | Sandia National Laboratories, Albuquerque, New Mexico 87185 |
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| Abstract: | We have fabricated highly oriented, chemically prepared thin films of Pb(Zr0.04Tio.0.60)O3 (PZT 40/60) on both insulating and conducting substrates. While (100) MgO single crystals were used as the insulating substrates, the conducting substrates. were fabricated by RF magnetron sputter deposition of 100-nm-thick (100) Pt films onto (100) MgO substrates. For comparison, we also fabricated PZT 40/60 films that had no significant preferential orientation on platinized MgO substrates. Sputter deposition of an underlying amorphous Pt film was used to fabricate randomly oriented PZT 40/60 films. Highly (001) oriented PZT 40/60 films had higher remanent polarization (61 μC/cm2 compared to 41 μC/cm2) and lower relative dielectric constant (368 compared to 466) than PZT 40/60 films that were randomly oriented. |
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