| 高阻碳膜电阻膜层TCR的改进 |
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| 引用本文： | 李承义.高阻碳膜电阻膜层TCR的改进[J].电子元件与材料,1995,14(5):28-31. |
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| 作者姓名： | 李承义 |
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| 作者单位： | 湖南益阳高新技术研究中心 |
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| 摘 要： | 基于碳膜固有的负电阻温度特性，在从工艺角度解决高阻碳膜电阻膜层ＴＣＲ偏高问题的同时，通过对物质的电导率形成机理的分析，提出了以硼置换碳的改性方案，为彻底实现高阻材料国产化提供了理论和实践的依据。
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| 关 键 词： | 高阻碳膜，电阻率温度系数 |
Improvement of Film Layer TCR of Carbon Resistors Having High Resistivity |
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| Li Chengyi.Improvement of Film Layer TCR of Carbon Resistors Having High Resistivity[J].Electronic Components & Materials,1995,14(5):28-31. |
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| Authors: | Li Chengyi |
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| Abstract: | While based on proper negative TCR of carbon film problem of too high TCR absolute value is solved in the field of technology, a programme of modification by substitution of boron for carbon has been advanced, thus provides theoretical and practical basis for thorough realization of domestication of high-resistance materials. |
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| Keywords: | carbon film having high resistivity temperature coefficient of resistivity |
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