Synthesis and properties of Fe3C film by r.f. magnetron sputtering |
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Authors: | S. Tajima S. Hirano |
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Affiliation: | (1) Department of Applied Chemistry, School of Engineering, Nagoya University, Furo-cho,Chikusa-ku, 464-01 Nagoya, Japan |
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Abstract: | Fe3C film, which is a promising new magnetic recording material, can be synthesized by r.f. magnetron sputtering. Several graphite plates were attached to an iron plate to adjust the area of a composite target for the control of film composition. The crystalline phases in a film changed from Fe-C solid solution to Fe3C with increasing substrate temperature from 350 °C and above. Sputtering at an argon pressure of 5 Pa was favourable for the formation of crystalline Fe3C film. All Fe3C films showed in-plane magnetization. The saturation magnetization of the film was around 100–120 e.m.u. g–1 regardless of the deposition conditions. The coercivity of the films increased from 1 Oe to 250 Oe with increasing substrate temperature, and the coercivity remained constant at 250 Oe at 350 °C, regardless of argon pressure. |
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