Coaxial metal-oxide-semiconductor (MOS) Au/Ga2O3/GaN nanowires |
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Authors: | Hsieh Chin-Hua Chang Mu-Tung Chien Yu-Jen Chou Li-Jen Chen Lih-Juann Chen Chii-Dong |
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Affiliation: | Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Section 2 Kuang-Fu Road, Hsinchu, Taiwan 300, Republic of China. |
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Abstract: | Coaxial metal-oxide-semiconductor (MOS) Au-Ga2O3-GaN heterostructure nanowires were successfully fabricated by an in situ two-step process. The Au-Ga2O3 core-shell nanowires were first synthesized by the reaction of Ga powder, a mediated Au thin layer, and a SiO2 substrate at 800 degrees C. Subsequently, these core-shell nanowires were nitridized in ambient ammonia to form a GaN coating layer at 600 degrees C. The GaN shell is a single crystal, an atomic flat interface between the oxide and semiconductor that ensures that the high quality of the MOS device is achieved. These novel 1D nitride-based MOS nanowires may have promise as building blocks to the future nitride-based vertical nanodevices. |
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