立方相GaN的高温MOCVD生长

利用MOCVD技术在提高生长温度(900℃)下生长出了高质量的立方相GaN,生长速度提高到1.6μm/h.高温生长的GaN样品近带边峰室温光荧光半高宽为48meV,小于在830℃下生长的GaN样品.在ω扫描模式下,X射线衍射表明高温生长的GaN具有较小的(002)峰半高宽21′.可以看出,尽管立方GaN是亚稳态,高生长温度仍然有利于其晶体质量的提高.本文对GaN生长中生长温度和生长速度之间的关系作了讨论.

Growth of Cubic GaN by MOCVD at High Temperature

High quality cubic GaN (c-GaN) is grown by metalorganic vapor deposition (MOCVD) at an increased growth temperature of 900℃,with the growth rate of 1.6μm/h.The full width at half maximum (FWHM) of room temperature photoluminescence (PL) for the high temperature grown GaN film is 48meV.It is smaller than that of the sample grown at 830℃.In X-ray diffraction (XRD) measurement,the high temperature grown GaN shows a (002) peak at 20° with a FWHM of 21′.It can be concluded that,although c-GaN is of metastable phase,high growth temperature is still beneficial to the improvement in its crystal quality.The relationship between the growth rate and growth temperature is also discussed.