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| 退火处理后非掺磷化铟的电传输特性 | |
| 引用本文： | 赵有文,罗以琳,孙聂枫,冯汉源,C.D.Beling,孙同年,林兰英.退火处理后非掺磷化铟的电传输特性[J].半导体学报,2002,23(1). |
| 作者姓名： | 赵有文 罗以琳 孙聂枫 冯汉源 C.D.Beling 孙同年 林兰英 |
| 作者单位： | 1. 中国科学院半导体研究所材料中心,北京,100083 2. 汕头大学物理系,汕头,515000 3. 信息产业部电子十三所,石家庄,050051 4. 香港大学物理系,香港 |
| 摘 要： | 利用变温霍尔和电流-电压特性(I-V)两种方法分别对半导体和半绝缘的退火非掺磷化铟材料进行了测量.在非掺退火后的半导体磷化铟样品中可以测到缺陷带电导,这与自由电子浓度较低、有一定补偿度的原生非掺磷化铟的情况类似.非掺SI-InP表现出不同于原生掺铁的SI-InP的I-V特性,在一直到击穿为止的外加电场范围内呈欧姆特性,而掺铁SI-InP的I-V具有与陷阱填充有关非线性特征.根据空间电荷限制电流的理论,这种现象可以解释为非掺SI-InP中没有未被电子占据的空的深能级缺陷. |
| 关 键 词： | InP 半绝缘 退火 |
Electrical Transport Properties of Annealed Undoped InP |
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| Zhao Youwen,Luo Yilin,Sun Niefeng,S.Fung,C.D.Beling,Sun Tongnian,Lin Lanyin.Electrical Transport Properties of Annealed Undoped InP[J].Chinese Journal of Semiconductors,2002,23(1). | |
| Authors: | Zhao Youwen Luo Yilin Sun Niefeng SFung CDBeling Sun Tongnian Lin Lanyin |
| Abstract: | The electrical properties of annealed undoped n-type InP are studied by temperature dependent Hall effect (TDH) and current-voltage(I-V)measurements for semiconducting and semi-insulating samples,respectively.Defect band conduction in annealed semiconducting InP can be observed from TDH measurement,which is similar to those of as-grown unintentionally doped InP with low carrier concentration and moderate compensation.The I-V curves of annealed undoped SI InP exhibit ohmic property in the applied field region up to the onset of breakdown.Such a result is different from that of as-grown Fe-doped SI InP which has a nonlinear region in I-V curve explained by the theory of space charge limited current. |
| Keywords: | indium phosphide semi insulating annealing |
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